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1. general description the NX3L1G66 provides one single pole single-throw analog switch function. it has two input/output terminals (y and z) and an active high enable input pin (e). when e is low, the analog switch is turned off. schmitt trigger action at the enable input (e) makes the circuit tolerant to slower input rise and fall times across the entire v cc range from 1.4 v to 4.3 v. the NX3L1G66 allows signals with amplitude up to v cc to be transmitted from y to z; or from z to y. its low on resistance (0.5 w ) and ?atness (0.13 w ) ensures minimal attenuation and distortion of transmitted signals. 2. features n wide supply voltage range from 1.4 v to 4.3 v n very low on resistance (peak): u 1.6 w (typical) at v cc = 1.4 v u 1.0 w (typical) at v cc = 1.65 v u 0.55 w (typical) at v cc = 2.3 v u 0.50 w (typical) at v cc = 2.7 v u 0.50 w (typical) at v cc = 4.3 v n high noise immunity n esd protection: u hbm jesd22-a114e class 3a exceeds 7500 v u mm jesd22-a115-a exceeds 200 v u cdm aec-q100-011 revision b exceeds 1000 v n cmos low-power consumption n latch-up performance exceeds 100 ma per jesd 78 class ii level a n direct interface with ttl levels at 3.0 v n control input accepts voltages above supply voltage n high current handling capability (350 ma continuous current under 3.3 v supply) n speci?ed from - 40 c to +85 c and from - 40 c to +125 c 3. applications n cell phone n pda n portable media player NX3L1G66 low-ohmic single-pole single-throw analog switch rev. 06 18 august 2009 product data sheet
NX3L1G66_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 18 august 2009 2 of 18 nxp semiconductors NX3L1G66 low-ohmic single-pole single-throw analog switch 4. ordering information 5. marking [1] the pin 1 indicator is located on the lower left corner of the device, below the marking code. 6. functional diagram 7. pinning information 7.1 pinning table 1. ordering information type number package temperature range name description version NX3L1G66gw - 40 c to +125 c tssop5 plastic thin shrink small outline package; 5 leads; body width 1.25 mm sot353-1 NX3L1G66gm - 40 c to +125 c xson6 plastic extremely thin small outline package; no leads; 6 terminals; body 1 1.45 0.5 mm sot886 table 2. marking codes [1] type number marking code NX3L1G66gw dl NX3L1G66gm dl fig 1. logic symbol fig 2. logic diagram 001aag487 e zy 001aah372 e yz fig 3. pin con?guration sot353-1 (tssop5) fig 4. pin con?guration sot886 (xson6) NX3L1G66 yv cc z gnd e 001aai590 1 2 3 5 4 NX3L1G66 z 001aah444 y gnd n.c. v cc e transparent top view 2 3 1 5 4 6
NX3L1G66_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 18 august 2009 3 of 18 nxp semiconductors NX3L1G66 low-ohmic single-pole single-throw analog switch 7.2 pin description 8. functional description [1] h = high voltage level; l = low voltage level. 9. limiting values [1] the minimum input voltage rating may be exceeded if the input current rating is observed. [2] the minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed but may not exceed 4.6 v. [3] for tssop5 package: above 87.5 c the value of p tot derates linearly with 4.0 mw/k. for xson6 package: above 118 c the value of p tot derates linearly with 7.8 mw/k. table 3. pin description symbol pin description sot353-1 sot886 y 1 1 independent input or output z 2 2 independent output or input gnd 3 3 ground (0 v) e 4 4 enable input (active high) n.c. - 5 not connected v cc 5 6 supply voltage table 4. function table [1] input e switch l off-state h on-state table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min max unit v cc supply voltage - 0.5 +4.6 v v i input voltage enable input e [1] - 0.5 +4.6 v v sw switch voltage [2] - 0.5 v cc + 0.5 v i ik input clamping current v i < - 0.5 v - 50 - ma i sk switch clamping current v i < - 0.5 v or v i >v cc + 0.5 v - 50 ma i sw switch current v sw > - 0.5 v or v sw < v cc + 0.5 v; source or sink current - 350 ma v sw > - 0.5 v or v sw < v cc + 0.5 v; pulsed at 1 ms duration, < 10 % duty cycle; peak current - 500 ma t stg storage temperature - 65 +150 c p tot total power dissipation t amb = - 40 c to +125 c [3] - 250 mw
NX3L1G66_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 18 august 2009 4 of 18 nxp semiconductors NX3L1G66 low-ohmic single-pole single-throw analog switch 10. recommended operating conditions [1] to avoid sinking gnd current from terminal z when switch current ?ows in terminal y, the voltage drop across the bidirection al switch must not exceed 0.4 v. if the switch current ?ows into terminal z, no gnd current will ?ow from terminal y. in this case, there i s no limit for the voltage drop across the switch. [2] applies to control signal levels. 11. static characteristics table 6. recommended operating conditions symbol parameter conditions min max unit v cc supply voltage 1.4 4.3 v v i input voltage enable input e 0 4.3 v v sw switch voltage [1] 0v cc v t amb ambient temperature - 40 +125 c d t/ d v input transition rise and fall rate v cc = 1.4 v to 4.3 v [2] - 200 ns/v table 7. static characteristics at recommended operating conditions; voltages are referenced to gnd (ground 0 v). symbol parameter conditions t amb = 25 c t amb = - 40 c to +125 c unit min typ max min max (85 c) max (125 c) v ih high-level input voltage v cc = 1.4 v to 1.95 v 0.65v cc - - 0.65v cc --v v cc = 2.3 v to 2.7 v 1.7 - - 1.7 - - v v cc = 2.7 v to 3.6 v 2.0 - - 2.0 - - v v cc = 3.6 v to 4.3 v 0.7v cc - - 0.7v cc --v v il low-level input voltage v cc = 1.4 v to 1.95 v - - 0.35v cc - 0.35v cc 0.35v cc v v cc = 2.3 v to 2.7 v - - 0.7 - 0.7 0.7 v v cc = 2.7 v to 3.6 v - - 0.8 - 0.8 0.8 v v cc = 3.6 v to 4.3 v - - 0.3v cc - 0.3v cc 0.3v cc v i i input leakage current enable input e; v i = gnd to 4.3 v; v cc = 1.4 v to 4.3 v --- - 0.5 1 m a i s(off) off-state leakage current y port; see figure 5 v cc = 1.4 v to 3.6 v - - 5- 50 500 na v cc = 3.6 v to 4.3 v - - 10 - 50 500 na i s(on) on-state leakage current z port; see figure 6 v cc = 1.4 v to 3.6 v - - 5- 50 500 na v cc = 3.6 v to 4.3 v - - 10 - 50 500 na i cc supply current v i =v cc or gnd; v sw = gnd or v cc v cc = 3.6 v - - 100 - 690 6000 na v cc = 4.3 v - - 150 - 800 7000 na
NX3L1G66_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 18 august 2009 5 of 18 nxp semiconductors NX3L1G66 low-ohmic single-pole single-throw analog switch 11.1 test circuits 11.2 on resistance c i input capacitance - 1.0 - - - - pf c s(off) off-state capacitance -35- - - -pf c s(on) on-state capacitance - 110 - - - - pf table 7. static characteristics continued at recommended operating conditions; voltages are referenced to gnd (ground 0 v). symbol parameter conditions t amb = 25 c t amb = - 40 c to +125 c unit min typ max min max (85 c) max (125 c) v i = 0.3 v or v cc - 0.3 v; v o =v cc - 0.3 v or 0.3 v. v i = 0.3 v or v cc - 0.3 v; v o = open circuit. fig 5. test circuit for measuring off-state leakage current fig 6. test circuit for measuring on-state leakage current 001aag488 i s v i v il v o v cc gnd y z e 001aag489 i s v i v ih v o v cc gnd y z e table 8. on resistance at recommended operating conditions; voltages are referenced to gnd (ground = 0 v); for graphs see figure 8 to figure 14 . symbol parameter conditions t amb = - 40 c to +85 c t amb = - 40 c to +125 c unit min typ [1] max min max r on(peak) on resistance (peak) v i = gnd to v cc ; i sw = 100 ma; see figure 7 v cc = 1.4 v - 1.6 3.7 - 4.1 w v cc = 1.65 v - 1.0 1.6 - 1.7 w v cc = 2.3 v - 0.55 0.8 - 0.9 w v cc = 2.7 v - 0.5 0.75 - 0.9 w v cc = 4.3 v - 0.5 0.75 - 0.9 w
NX3L1G66_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 18 august 2009 6 of 18 nxp semiconductors NX3L1G66 low-ohmic single-pole single-throw analog switch [1] typical values are measured at t amb =25 c. [2] flatness is de?ned as the difference between the maximum and minimum value of on resistance measured at identical v cc and temperature. 11.3 on resistance test circuit and graphs r on(?at) on resistance (?atness) v i = gnd to v cc ; i sw = 100 ma [2] v cc = 1.4 v - 1.0 3.3 - 3.6 w v cc = 1.65 v - 0.5 1.2 - 1.3 w v cc = 2.3 v - 0.15 0.3 - 0.35 w v cc = 2.7 v - 0.13 0.3 - 0.35 w v cc = 4.3 v - 0.2 0.4 - 0.45 w table 8. on resistance continued at recommended operating conditions; voltages are referenced to gnd (ground = 0 v); for graphs see figure 8 to figure 14 . symbol parameter conditions t amb = - 40 c to +85 c t amb = - 40 c to +125 c unit min typ [1] max min max r on =v sw / i sw . (1) v cc = 1.5 v. (2) v cc = 1.8 v. (3) v cc = 2.5 v. (4) v cc = 2.7 v. (5) v cc = 3.3 v. (6) v cc = 4.3 v. measured at t amb =25 c. fig 7. test circuit for measuring on resistance fig 8. typical on resistance as a function of input voltage 001aah375 v i v ih v cc gnd y z e v sw i sw v i (v) 05 4 3 12 001aag564 0.8 0.4 1.2 1.6 r on ( w ) 0 (1) (2) (5) (6) (4) (3)
NX3L1G66_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 18 august 2009 7 of 18 nxp semiconductors NX3L1G66 low-ohmic single-pole single-throw analog switch (1) t amb = 125 c. (2) t amb =85 c. (3) t amb =25 c. (4) t amb = - 40 c. (1) t amb = 125 c. (2) t amb =85 c. (3) t amb =25 c. (4) t amb = - 40 c. fig 9. on resistance as a function of input voltage; v cc = 1.5 v fig 10. on resistance as a function of input voltage; v cc = 1.8 v 001aag565 v i (v) 03 2 1 0.8 0.4 1.2 1.6 r on ( w ) 0 (1) (2) (3) (4) 001aag566 v i (v) 03 2 1 0.4 0.6 0.2 0.8 1.0 r on ( w ) 0 (1) (2) (3) (4) (1) t amb = 125 c. (2) t amb =85 c. (3) t amb =25 c. (4) t amb = - 40 c. (1) t amb = 125 c. (2) t amb =85 c. (3) t amb =25 c. (4) t amb = - 40 c. fig 11. on resistance as a function of input voltage; v cc = 2.5 v fig 12. on resistance as a function of input voltage; v cc = 2.7 v 001aag567 v i (v) 03 2 1 0.4 0.6 0.2 0.8 1.0 r on ( w ) 0 (1) (2) (3) (4) 001aag568 v i (v) 03 2 1 0.4 0.6 0.2 0.8 1.0 r on ( w ) 0 (1) (2) (3) (4)
NX3L1G66_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 18 august 2009 8 of 18 nxp semiconductors NX3L1G66 low-ohmic single-pole single-throw analog switch 12. dynamic characteristics [1] typical values are measured at t amb =25 c and v cc = 1.5 v, 1.8 v, 2.5 v, 3.3 v and 4.3 v respectively. (1) t amb = 125 c. (2) t amb =85 c. (3) t amb =25 c. (4) t amb = - 40 c. (1) t amb = 125 c. (2) t amb =85 c. (3) t amb =25 c. (4) t amb = - 40 c. fig 13. on resistance as a function of input voltage; v cc = 3.3 v fig 14. on resistance as a function of input voltage; v cc = 4.3 v v i (v) 04 3 12 001aag569 0.4 0.6 0.2 0.8 1.0 r on ( w ) 0 (1) (2) (3) (4) v i (v) 05 4 23 1 001aaj896 0.4 0.6 0.2 0.8 1.0 r on ( w ) 0 (1) (2) (3) (4) table 9. dynamic characteristics at recommended operating conditions; voltages are referenced to gnd (ground = 0 v); for load circuit see figure 16 . symbol parameter conditions 25 c - 40 c to +125 c unit min typ [1] max min max (85 c) max (125 c) t en enable time e to z or y; see figure 15 v cc = 1.4 v to 1.6 v - 27 41 - 43 48 ns v cc = 1.65 v to 1.95 v - 22 33 - 34 36 ns v cc = 2.3 v to 2.7 v - 17 26 - 27 30 ns v cc = 2.7 v to 3.6 v - 14 23 - 24 26 ns v cc = 3.6 v to 4.3 v - 14 23 - 24 26 ns t dis disable time e to z or y; see figure 15 v cc = 1.4 v to 1.6 v - 9 18 - 19 21 ns v cc = 1.65 v to 1.95 v - 7 13 - 15 16 ns v cc = 2.3 v to 2.7 v - 4 8 - 9 10 ns v cc = 2.7 v to 3.6 v - 4 8 - 8 9 ns v cc = 3.6 v to 4.3 v - 4 8 - 8 9 ns
NX3L1G66_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 18 august 2009 9 of 18 nxp semiconductors NX3L1G66 low-ohmic single-pole single-throw analog switch 12.1 waveform and test circuits measurement points are given in t ab le 10 . logic level: v oh is the typical output voltage that occurs with the output load. fig 15. enable and disable times 001aah875 y output off to high high to off e input v i v oh gnd gnd v m t en t dis v x v x switch enabled switch disabled switch disabled table 10. measurement points supply voltage input output v cc v m v x 1.4 v to 4.3 v 0.5v cc 0.9v oh test data is given in t ab le 11 . de?nitions test circuit: r l = load resistance. c l = load capacitance including jig and probe capacitance. v ext = external voltage for measuring switching times. fig 16. load circuit for switching times 001aah377 e y/z z/y r l c l v cc v ext = 1.5 v v i v v o g table 11. test data supply voltage input load v cc v i t r , t f c l r l 1.4 v to 4.3 v v cc 2.5 ns 35 pf 50 w
NX3L1G66_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 18 august 2009 10 of 18 nxp semiconductors NX3L1G66 low-ohmic single-pole single-throw analog switch 12.2 additional dynamic characteristics [1] f i is biased at 0.5v cc . table 12. additional dynamic characteristics at recommended operating conditions; voltages are referenced to gnd (ground = 0 v); v i = gnd or v cc (unless otherwise speci?ed); t r = t f 2.5 ns. symbol parameter conditions 25 c unit min typ max thd total harmonic distortion f i = 20 hz to 20 khz; r l =32 w ; see figure 17 [1] v cc = 1.4 v; v i = 1 v (p-p) - 0.15 - % v cc = 1.65 v; v i = 1.2 v (p-p) - 0.10 - % v cc = 2.3 v; v i = 1.5 v (p-p) - 0.02 - % v cc = 2.7 v; v i = 2 v (p-p) - 0.02 - % v cc = 4.3 v; v i = 2 v (p-p) - 0.02 - % f ( - 3db) - 3 db frequency response r l =50 w ; see figure 18 [1] v cc = 1.4 v to 4.3 v - 60 - mhz a iso isolation (off-state) f i = 100 khz; r l =50 w ; see figure 19 [1] v cc = 1.4 v to 4.3 v - - 90 - db v ct crosstalk voltage between digital inputs and switch; f i = 1 mhz; c l = 50 pf; r l =50 w ; see figure 20 v cc = 1.4 v to 3.6 v - 0.2 - v v cc = 3.6 v to 4.3 v - 0.2 - v q inj charge injection f i = 1 mhz; c l = 0.1 nf; r l =1 m w ; v gen =0v; r gen =0 w ; see figure 21 v cc = 1.5 v - 3 - pc v cc = 1.8 v - 3 - pc v cc = 2.5 v - 3 - pc v cc = 3.3 v - 3 - pc v cc = 4.3 v - 6 - pc
NX3L1G66_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 18 august 2009 11 of 18 nxp semiconductors NX3L1G66 low-ohmic single-pole single-throw analog switch 12.3 test circuits fig 17. test circuit for measuring total harmonic distortion 001aah378 v ih v cc 0.5v cc z/y y/z e f i r l d adjust f i voltage to obtain 0 dbm level at output. increase f i frequency until db meter reads - 3db. fig 18. test circuit for measuring the frequency response when channel is in on-state 001aah379 v ih v cc 0.5v cc z/y y/z e f i r l db adjust f i voltage to obtain 0 dbm level at input. fig 19. test circuit for measuring isolation (off-state) 001aah380 v il v cc 0.5v cc z/y y/z e f i r l 0.5v cc r l db
NX3L1G66_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 18 august 2009 12 of 18 nxp semiconductors NX3L1G66 low-ohmic single-pole single-throw analog switch a. test circuit b. input and output pulse de?nitions fig 20. test circuit for measuring crosstalk voltage between digital inputs and switch 001aah383 e y/z z/y r l c l v cc v i v v o g 0.5v cc r l 0.5v cc v ct 001aah381 off logic input (e) v o on off
NX3L1G66_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 18 august 2009 13 of 18 nxp semiconductors NX3L1G66 low-ohmic single-pole single-throw analog switch a. test circuit b. input and output pulse de?nitions de?nition: q inj = d v o c l . d v o = output voltage variation. r gen = generator resistance. v gen = generator voltage. fig 21. test circuit for measuring charge injection 001aah385 e y/z z/y gnd r l c l v cc v gen r gen v i v v o g 001aah384 v o off on off logic input (e) v o
NX3L1G66_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 18 august 2009 14 of 18 nxp semiconductors NX3L1G66 low-ohmic single-pole single-throw analog switch 13. package outline fig 22. package outline sot353-1 (tssop5) unit a 1 a max. a 2 a 3 b p l h e l p wy v ce d (1) e (1) z (1) q references outline version european projection issue date iec jedec jeita mm 0.1 0 1.0 0.8 0.30 0.15 0.25 0.08 2.25 1.85 1.35 1.15 0.65 e 1 1.3 2.25 2.0 0.60 0.15 7 0 0.1 0.1 0.3 0.425 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 0.46 0.21 sot353-1 mo-203 sc-88a 00-09-01 03-02-19 w m b p d z e e 1 0.15 13 5 4 q a a 2 a 1 l p (a 3 ) detail x l h e e c v m a x a y 1.5 3 mm 0 scale tssop5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm sot353-1 1.1
NX3L1G66_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 18 august 2009 15 of 18 nxp semiconductors NX3L1G66 low-ohmic single-pole single-throw analog switch fig 23. package outline sot886 (xson6) terminal 1 index area references outline version european projection issue date iec jedec jeita sot886 mo-252 sot886 04-07-15 04-07-22 dimensions (mm are the original dimensions) xson6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm d e e 1 e a 1 b l l 1 e 1 0 1 2 mm scale notes 1. including plating thickness. 2. can be visible in some manufacturing processes. unit mm 0.25 0.17 1.5 1.4 0.35 0.27 a 1 max b e 1.05 0.95 d ee 1 l 0.40 0.32 l 1 0.5 0.6 a (1) max 0.5 0.04 1 6 2 5 3 4 6 (2) 4 (2) a
NX3L1G66_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 18 august 2009 16 of 18 nxp semiconductors NX3L1G66 low-ohmic single-pole single-throw analog switch 14. abbreviations 15. revision history table 13. abbreviations acronym description cdm charged-device model cmos complementary metal-oxide semiconductor esd electrostatic discharge hbm human body model mm machine model pda personal digital assistant ttl transistor-transistor logic table 14. revision history document id release date data sheet status change notice supersedes NX3L1G66_6 20090818 product data sheet - NX3L1G66_5 modi?cations: section 11.2 on resistance for r on(?at) the v cc = 4.3 v values updated. NX3L1G66_5 20090403 product data sheet - NX3L1G66_4 NX3L1G66_4 20090317 product data sheet - NX3L1G66_3 NX3L1G66_3 20080724 product data sheet - NX3L1G66_2 NX3L1G66_2 20080307 product data sheet - NX3L1G66_1 NX3L1G66_1 20080103 product data sheet - -
NX3L1G66_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 18 august 2009 17 of 18 nxp semiconductors NX3L1G66 low-ohmic single-pole single-throw analog switch 16. legal information 16.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 16.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 16.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. 16.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 17. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors NX3L1G66 low-ohmic single-pole single-throw analog switch ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 18 august 2009 document identifier: NX3L1G66_6 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 18. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 ordering information . . . . . . . . . . . . . . . . . . . . . 2 5 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 7 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 7.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 7.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 functional description . . . . . . . . . . . . . . . . . . . 3 9 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 10 recommended operating conditions. . . . . . . . 4 11 static characteristics. . . . . . . . . . . . . . . . . . . . . 4 11.1 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 11.2 on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . 5 11.3 on resistance test circuit and graphs. . . . . . . . 6 12 dynamic characteristics . . . . . . . . . . . . . . . . . . 8 12.1 waveform and test circuits . . . . . . . . . . . . . . . . 9 12.2 additional dynamic characteristics . . . . . . . . . 10 12.3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 package outline . . . . . . . . . . . . . . . . . . . . . . . . 14 14 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16 15 revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 16 legal information. . . . . . . . . . . . . . . . . . . . . . . 17 16.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 16.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 16.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 16.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 17 contact information. . . . . . . . . . . . . . . . . . . . . 17 18 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

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